High performance drive structure for MOSFET power switches

Miscellaneous active electrical nonlinear devices – circuits – and – Gating – Utilizing three or more electrode solid-state device

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Details

327374, 327382, 361 18, H03K 1704

Patent

active

056358679

ABSTRACT:
A high performance isolated gate drive circuit for driving MOSFET is disclosed which uses a MOSFET pull-down device, provides unusually low gate discharge impedance, exceptionally fast turn-off of the controlled switch and reduced power dissipation in the overall gate drive circuit. It also provides superior off-time noise immunity.

REFERENCES:
patent: 4634903 (1987-01-01), Montorfano
patent: 4705962 (1987-11-01), Kinoshita et al.
patent: 4748351 (1988-05-01), Barzegar
patent: 4767952 (1988-08-01), Nollet
patent: 5138515 (1992-08-01), Bourgeois
patent: 5303128 (1994-04-01), Rozman

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