Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2006-12-12
2006-12-12
Nguyen, Cuong (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S359000
Reexamination Certificate
active
07148556
ABSTRACT:
A p-type polysilicon resistor formed in the inter-level dielectric layer contains an implanted diode. A positive voltage applied to the diode modulates the depletion region of the diode and changes the absolute resistance of the p-type polysilicon resistor. This modulation occurs not only horizontally, but also vertically. The fact that the tunable resistor is a p-type polysilicon resistor means that this structure can easily be integrated into the process since polysilicon is used as a gate material for basic CMOS processing.
REFERENCES:
patent: 4849344 (1989-07-01), Desbiens et al.
patent: 5739577 (1998-04-01), Tuttle
patent: 6984869 (2006-01-01), Erickson et al.
patent: 2005/0116301 (2005-06-01), Shaw et al.
Erickson Sean
Nunn Kevin
Shaw Jonathan A.
LSI Logic Corporation
Yee & Associates P.C.
LandOfFree
High performance diode-implanted voltage-controlled poly... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with High performance diode-implanted voltage-controlled poly..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High performance diode-implanted voltage-controlled poly... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3692345