High performance differential amplifiers with thick oxide...

Amplifiers – With semiconductor amplifying device – Including differential amplifier

Reexamination Certificate

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C330S254000

Reexamination Certificate

active

11155430

ABSTRACT:
A circuit is described which uses a thick gate oxide device in the input stage and a thin gate oxide device in a second stage that is connected to the input stage. The input stage thick gate oxide device provides a low input gate leakage current. The thin gate oxide device in the second stage has high performance characteristics due to the use of the thin gate oxide device. The circuit thereby has high performance characteristics and low input gate leakage current. In various applications, the circuit may be, for example, an amplifier, a differential amplifier, a variable gain differential amplifier, or an operational amplifier in a sample and hold circuit. A guideline is provided where the thick gate oxide layer is about 1.5× the thickness of the thin gate oxide layer. Also, a design to control the circuit's common mode voltage using common mode voltage feedback is described.

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patent: 6677822 (2004-01-01), Hasegawa
patent: 6778569 (2004-08-01), Fischer
Christensen, Tom, “Hard disk drive read channels ‘a must for perpendicular recording’”, http://www.planetanalog.com/show/Article?articleID=20900003 (May 20, 2004).

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