High-performance CMOS SOI devices on hybrid crystal-oriented...

Details High-performance CMOS SOI devices on hybrid crystal-oriented... High-performance CMOS SOI devices on hybrid crystal-oriented...

2006-02-07

2006-02-07

Hu, Shouxiang (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Physical configuration of semiconductor

With specified crystal plane or axis

C257S347000, C257S527000

Reexamination Certificate

active

06995456

ABSTRACT:
Disclosed is an integrated circuit structure that has a substrate having at least two types of crystalline orientations. The first-type transistors are on first portions of the substrate that have a first type of crystalline orientation and second-type transistors are on second portions of the substrate that have a second type of crystalline orientation. The straining layer is above the first-type transistors and the second-type transistors. Further, the straining layer can be strained above the first-type transistors and relaxed above the second-type transistors.

REFERENCES:
patent: 6657223 (2003-12-01), Wang et al.
patent: 2004/0195623 (2004-10-01), Ge et al.
patent: 2004/0195646 (2004-10-01), Yeo et al.

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