High performance CMOS sense amplifier

Electrical transmission or interconnection systems – Personnel safety or limit control features – Interlock

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307200B, 307279, 307DIG3, 365205, H03K 520, G11C 700

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active

041692330

ABSTRACT:
A high performance sense amplifier that is preferably fabricated from complementary metal oxide semiconductor field effect transistors (CMOSFETs) and is especially suited for applications in a radiation hardened environment. The sense amplifier of the present invention is characterized by high sensitivity, high gain, good noise immunity, low power dissipation, fast operation, relatively small geometrical size, and good stabilization for temperature and supply effects while providing self-compensation for non-uniformities of electrical parameters which may occur as the result of MOS device processing or exposure to a nuclear radiation event.

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Chin et al., "Low-Power Data Register"; IBM Tech. Discl. Bull.; vol. 15, No. 12, pp. 3891-3892; 5/1973.
Chin et al., "Sense Latch for One Device Memory Cell"; IBM Tech. Discl. Bull.; vol. 15, No. 11, pp. 3379-3380; 4/1973.

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