High performance capacitor with high dielectric constant...

Details High performance capacitor with high dielectric constant... High performance capacitor with high dielectric constant...

2005-12-02

2008-09-23

Ha, Nguyen T (Department: 2831)

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

C361S321100, C361S306100, C361S311000, C361S313000, C361S301500

Reexamination Certificate

active

07428137

ABSTRACT:
A multilayered high performance capacitor formed of two or more conductors with a dielectric layer and one or more a dielectric-conductor interface layer sandwiched in between the conductors. The capacitor may be fabricated using many thin layers, at the nano level, providing a nanocapacitor. The capacitor may employ an interleaved structured where numerous conductor layers are interleaved with other conductor layers. The dielectric layers may be multilayered or a single layer and may consist of materials with high dielectric constants ranging from 800 to over 1 million, including materials in the perovskite-oxide family. The capacitor can be shaped, sized and the appropriate materials selected to obtain breakdown voltages within the range of 0.1 to over 11 MV/cm and to obtain specific energies and energy densities equivalent to or exceeding the power characteristics of known capacitors, fuel cells, and batteries. The nanocapacitor may be combined with other nanocapacitors to form stacks, packs, or grids of cells where the cells may be connected in series, parallel or both to provide increased energy or power characteristics.

REFERENCES:
patent: 4189760 (1980-02-01), Marshall
patent: 4870538 (1989-09-01), Baldwin et al.
patent: 5144527 (1992-09-01), Amano et al.
patent: 5414588 (1995-05-01), Barbee, Jr. et al.
patent: 5434742 (1995-07-01), Saito et al.
patent: 5471363 (1995-11-01), Mihara
patent: 5486277 (1996-01-01), Barbee, Jr. et al.
patent: 5742471 (1998-04-01), Barbee, Jr. et al.
patent: 5870273 (1999-02-01), Sogabe et al.
patent: 5922214 (1999-07-01), Liu et al.
patent: RE37032 (2001-01-01), Gardner et al.
patent: 6370010 (2002-04-01), Kuroda et al.
patent: 6380627 (2002-04-01), Weihs et al.
patent: 6487065 (2002-11-01), Nishino et al.
patent: 6577494 (2003-06-01), Watanabe et al.
patent: 6602722 (2003-08-01), Yamamoto et al.
patent: 6606237 (2003-08-01), Naito et al.
patent: 6813931 (2004-11-01), Yadav et al.
patent: 6829137 (2004-12-01), Konaka et al.
patent: 6885056 (2005-04-01), Dornisch et al.
patent: 6888188 (2005-05-01), Basceri
patent: 6891714 (2005-05-01), Sakashita
patent: 6900977 (2005-05-01), Nakamura et al.
patent: 7091548 (2006-08-01), Jeong et al.
patent: 7224573 (2007-05-01), Sommariva et al.
patent: 2004/0071944 (2004-04-01), Weir et al.
patent: 2005/0107241 (2005-05-01), Umeda et al.
patent: 2003-218227 (2003-07-01), None
patent: 2004-292271 (2004-10-01), None
“Nanocapacitor Technology for Specialty Market Opportunity.” MBAGlobalNet.com, 1 page printed from the Internet Jun. 9, 2005.
“Pervoskite Thin Films for High Frequency Capacitor Applications,” Annual Reviews, 1 page printed from the Internet Jun. 9, 2005.
Li et al., “High Permitivity neodymium-doped barium titanate sintered in pure nitrogen,” Dec. 22, 2003.
Lin et al., “Preparation of core/shell structured NiO-based ceramics and their dielectric properties,” Mar. 16, 2005.
Bender et al., “The effect of starting powders on the giant dielectric properties of the pervoskite CaCu3Ti4O12,” 2005.
Bruno et al., “High-performance multilayer capacitor dielectrics from chemically prepared powders.” Nov. 19, 1992.
Sinclair et al., “CaCu3Ti4O12: One-step internal barrier layer capacitor,” Jan. 24, 2002.
West et al., “Novel high capacitance materials” BaTiO3:La and CaCu3Ti4O12, 2003.
Tselev at al., “Evidence for power-law frequency dependence of intrinsic dielectric response in the CaCu3Ti4O12,” Aug. 5, 2004.
Homes et al., “Optical response of high-dielectric constant perovskite-related oxide,” Jul. 27, 2001.
Fang et al., “Effects of post-anneal conditions on the dielectric properties of CaCu3Ti4O12 thin films prepared on Pt/Ti/SiO2/Si substrates,” 2002.
Ramirez et al., “Giant dielectric constant response in a copper titanate,” abstract only, Apr. 24, 2000.

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