High-performance bipolar microwave transistor

Details High-performance bipolar microwave transistor High-performance bipolar microwave transistor

1980-12-19

1983-04-19

Edlow, Martin H.

357 16, 357 58, 357 91, H01L 29161, H01L 2972, H01L 2912

Patent

active

043807747

ABSTRACT:
A high-frequency transistor and method of making same wherein the parasitic apacitance between base and collector is reduced. The collector layer of GaAs is impregnated with boron ions to form an insulative region under the base contact structure thereby reducing the capacitance in this region and leaving only the region underlying the emitter structure as the active transistor region.

REFERENCES:
patent: 3622842 (1971-11-01), Oberai
patent: 3653978 (1972-04-01), Robinson et al.
patent: 4007474 (1977-02-01), Yagi et al.
patent: 4151006 (1979-04-01), DeGraaff et al.
patent: 4173763 (1979-11-01), Chang et al.
patent: 4286275 (1981-08-01), Heiblum

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