High output solar cells

Batteries: thermoelectric and photoelectric – Thermoelectric – Radiation pyrometer

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136 89SG, 357 30, H01L 3106

Patent

active

041585771

ABSTRACT:
A high output solar cell comprises a three-layer semiconductor compound article, the layers being doped in pn.sub.1 n.sub.2 order in the direction of light travel, the pn.sub.1 junction being a homojunction and the n.sub.1 n.sub.2 junction being a heterojunction. The doping of the layers is such that "valley-tranferred" or "hot" electrons, so-called, are created in th p and n region secondary electron conduction bands and are transferred to the normal conduction band edge of the n.sub.2 heterojunction material and ultimately to an ohmic contact.

REFERENCES:
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patent: 3995303 (1976-11-01), Nahory et al.
patent: 4122476 (1978-10-01), Hovel et al.
S. C. Tsaur et al., "Theoretical & Experimental Results for GaAs Solar Cells," 4th Int'l. Symposium on GaAs, Boulder, Colorado, (1972).
J. S. Escher et al., "Bias-Assisted Photoemission in the 1-2 Micron Range," Technical Digest, 1977 Int'l. Electron Devices Meeting, Wash., D.C., (1977).
H. Hovel et al., "Photographic Light Meter & Self-Powered Exposure Controller," IBM Tech. Disc. Bull., vol. 15, p. 3443, (1973).
M. Konagai et al., "Graded-Band-Gap p-Ga.sub.1-x Al.sub.x As-nGaAs Heterojunction Solar Cells," J. Appl. Phys., vol. 46, pp. 3542-3546, (1975).

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