High output semiconductor laser element having robust electrode

Coherent light generators – Particular active media – Semiconductor

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

372 44, 372 46, H01S 318, H01S 319

Patent

active

057905770

ABSTRACT:
A high-output semiconductor laser element has one of a Cr/Pt/Au electrode and Cr/Ni/Au electrode as a P-type electrode to provide an electrode construction that is robust with respect to heat, high in reliability and stable for a long period of time. The P-type electrode is disposed on an N-type substrate via an epitaxial layer and defines a stripe 41 having a width of 100 .mu.m or more.

REFERENCES:
patent: 3660780 (1972-05-01), Iida et al.
patent: 4251780 (1981-02-01), Scifres et al.
patent: 4574292 (1986-03-01), Takikawa et al.
patent: 4956682 (1990-09-01), Ohnaka et al.
patent: 5041700 (1991-08-01), Iyogi et al.
patent: 5355384 (1994-10-01), Inoue et al.
patent: 5559819 (1996-09-01), Abe et al.
patent: 5604761 (1997-02-01), Seki et al.
patent: 5623509 (1997-04-01), Iwano et al.
patent: 5638391 (1997-06-01), Shima et al.
patent: 5684816 (1997-11-01), Takagi
Patent Abstracts of Japan, vol. 12, No. 167.
Patent Abstracts of Japan, vol. 1, No. 123.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

High output semiconductor laser element having robust electrode does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High output semiconductor laser element having robust electrode , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High output semiconductor laser element having robust electrode will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1186158

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.