Coherent light generators – Particular active media – Semiconductor
Patent
1996-09-30
1998-08-04
Bovernick, Rodney B.
Coherent light generators
Particular active media
Semiconductor
372 44, 372 46, H01S 318, H01S 319
Patent
active
057905770
ABSTRACT:
A high-output semiconductor laser element has one of a Cr/Pt/Au electrode and Cr/Ni/Au electrode as a P-type electrode to provide an electrode construction that is robust with respect to heat, high in reliability and stable for a long period of time. The P-type electrode is disposed on an N-type substrate via an epitaxial layer and defines a stripe 41 having a width of 100 .mu.m or more.
REFERENCES:
patent: 3660780 (1972-05-01), Iida et al.
patent: 4251780 (1981-02-01), Scifres et al.
patent: 4574292 (1986-03-01), Takikawa et al.
patent: 4956682 (1990-09-01), Ohnaka et al.
patent: 5041700 (1991-08-01), Iyogi et al.
patent: 5355384 (1994-10-01), Inoue et al.
patent: 5559819 (1996-09-01), Abe et al.
patent: 5604761 (1997-02-01), Seki et al.
patent: 5623509 (1997-04-01), Iwano et al.
patent: 5638391 (1997-06-01), Shima et al.
patent: 5684816 (1997-11-01), Takagi
Patent Abstracts of Japan, vol. 12, No. 167.
Patent Abstracts of Japan, vol. 1, No. 123.
Abe Katsunori
Atsumi Kinya
Kimura Yuji
Toyama Tetsuo
Bovernick Rodney B.
Leung Quyen Phan
Nippondenso Co. Ltd.
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