High output power injection lasers

Details High output power injection lasers High output power injection lasers

1980-08-25

1982-05-04

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, 372 48, H01S 319

Patent

active

043284698

ABSTRACT:
In a heterostructure injection laser having an active layer sandwiched by a pair of intermediate index layers, a very thin low refractive index and high bandgap may be employed between at least active layer and one intermediate layer or at least contiguous with a surface of at least one intermediate layer remote from the active layer. These thin layers may be applied in various positional combinations to produce desired effects on fundamental mode guiding.

REFERENCES:
patent: 4063189 (1977-12-01), Scifres et al.
H. C. Casey, Jr. et al., "GaAs-Al.sub.x G.sub.1-x As Heterostructure Laser With Separate Optical and Carrier Confinement", J. of Applied Physics, vol. 45, No. 1, Jan. 1974, pp. 322-332.
D. R. Scifres et al., "Leaky Wave Room-Temperature Double Heterostructure GaAs:GaAlAs Diode Laser", Applied Physics Letters, vol. 29, No. 1, Jul. 1, 1976, pp. 23-25.

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