Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure
Reexamination Certificate
2005-04-22
2010-06-15
Louie, Wai-Sing (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With housing or contact structure
C257S079000, C257S098000, C257S103000, C257SE33023
Reexamination Certificate
active
07737459
ABSTRACT:
A light emitting diode is disclosed that includes a silicon carbide substrate and a light emitting structure formed from the Group III nitride material system on the substrate. The diode has an area greater than 100,000 square microns and has a radiant flux at 20 milliamps current of at least 29 milliwatts at its dominant wavelength between 390 and 540 nanometers.
REFERENCES:
patent: 2001622 (1935-05-01), McCaa
patent: 4675875 (1987-06-01), Takamiya et al.
patent: 4703219 (1987-10-01), Mesquida
patent: 4902356 (1990-02-01), Noguchi et al.
patent: 4912532 (1990-03-01), Cook et al.
patent: 4990972 (1991-02-01), Satoh et al.
patent: 5103271 (1992-04-01), Izumiya et al.
patent: 5376580 (1994-12-01), Kish et al.
patent: 5416342 (1995-05-01), Edmond et al.
patent: 5502316 (1996-03-01), Kish et al.
patent: 5696389 (1997-12-01), Ishikawa et al.
patent: 5739554 (1998-04-01), Edmond et al.
patent: 5838706 (1998-11-01), Edmond et al.
patent: 5912477 (1999-06-01), Negley
patent: 5962875 (1999-10-01), Motoki et al.
patent: 5985687 (1999-11-01), Bowers et al.
patent: 6071795 (2000-06-01), Cheung et al.
patent: 6100104 (2000-08-01), Haerle et al.
patent: 6120600 (2000-09-01), Edmond et al.
patent: 6187606 (2001-02-01), Edmond et al.
patent: 6201262 (2001-03-01), Edmond et al.
patent: 6258699 (2001-07-01), Chang et al.
patent: 6303405 (2001-10-01), Yoshida et al.
patent: 6335263 (2002-01-01), Cheung et al.
patent: 6365429 (2002-04-01), Kneissl et al.
patent: 6373077 (2002-04-01), Edmond et al.
patent: 6403985 (2002-06-01), Fan et al.
patent: 6410940 (2002-06-01), Jiang et al.
patent: 6410942 (2002-06-01), Thibeault et al.
patent: 6420199 (2002-07-01), Coman et al.
patent: 6420242 (2002-07-01), Cheung et al.
patent: 6448102 (2002-09-01), Kneissl et al.
patent: 6459100 (2002-10-01), Doverspike et al.
patent: 6465809 (2002-10-01), Furukawa et al.
patent: 6468824 (2002-10-01), Chen et al.
patent: 6559075 (2003-05-01), Kelly et al.
patent: 6562648 (2003-05-01), Wong et al.
patent: 6576930 (2003-06-01), Reeh et al.
patent: 6607931 (2003-08-01), Streubel
patent: 6610551 (2003-08-01), Doverspike et al.
patent: 6635503 (2003-10-01), Andrews et al.
patent: 6649437 (2003-11-01), Yang et al.
patent: 6657236 (2003-12-01), Thibeault et al.
patent: 6664560 (2003-12-01), Emerson et al.
patent: 6677173 (2004-01-01), Ota
patent: 6716654 (2004-04-01), Hsu et al.
patent: 6734033 (2004-05-01), Emerson et al.
patent: 6740604 (2004-05-01), Kelly et al.
patent: 6740906 (2004-05-01), Slater, Jr. et al.
patent: 6747298 (2004-06-01), Slater, Jr. et al.
patent: 6757314 (2004-06-01), Kneissl et al.
patent: 6786390 (2004-09-01), Yang et al.
patent: 6791119 (2004-09-01), Slater, Jr. et al.
patent: 6800500 (2004-10-01), Coman et al.
patent: 6800876 (2004-10-01), Edmond et al.
patent: 6806112 (2004-10-01), Horng et al.
patent: 6809341 (2004-10-01), Hsu et al.
patent: 6815312 (2004-11-01), Furukawa et al.
patent: 6821804 (2004-11-01), Thibeault et al.
patent: 6825501 (2004-11-01), Edmond et al.
patent: 6846686 (2005-01-01), Saeki et al.
patent: 6849878 (2005-02-01), Bader et al.
patent: 7135709 (2006-11-01), Wirth et al.
patent: 7250635 (2007-07-01), Lee et al.
patent: 7294866 (2007-11-01), Liu
patent: 7442966 (2008-10-01), Bader et al.
patent: 2002/0022290 (2002-02-01), Kong et al.
patent: 2002/0068373 (2002-06-01), Lo et al.
patent: 2002/0121642 (2002-09-01), Doverspike et al.
patent: 2002/0197764 (2002-12-01), Uemura et al.
patent: 2003/0015721 (2003-01-01), Slater et al.
patent: 2003/0045015 (2003-03-01), Slater, Jr. et al.
patent: 2003/0132701 (2003-07-01), Sato et al.
patent: 2003/0173602 (2003-09-01), Hsu et al.
patent: 2003/0197170 (2003-10-01), Bader et al.
patent: 2004/0004226 (2004-01-01), Eisert et al.
patent: 2004/0012027 (2004-01-01), Keller et al.
patent: 2004/0033638 (2004-02-01), Bader et al.
patent: 2004/0072382 (2004-04-01), Kelly et al.
patent: 2004/0124429 (2004-07-01), Stokes et al.
patent: 2004/0135158 (2004-07-01), Hon
patent: 2004/0232812 (2004-11-01), Beeson et al.
patent: 2005/0006669 (2005-01-01), Mishra et al.
patent: 2005/0018725 (2005-01-01), Nurmikko
patent: 2009/0166659 (2009-07-01), Edmond et al.
patent: 0 810 674 (1997-12-01), None
patent: 1 263 058 (2002-12-01), None
patent: 61059886 (1986-03-01), None
patent: 10-114600 (1998-05-01), None
patent: 11238913 (1999-08-01), None
patent: 2004-047760 (2004-02-01), None
Harle et al., Advanced Technologies for High Efficiency GalnN LEDs for Solid State Lighting, Third Intl. Conference on Solid State Lighting, Proc. of SPIE, vol. 5187, 2004.
Koike et al., Development of High Efficency GaN-based Multiquantum-Well Light Emitting Diodes and their Applications, IEEE, vol. 8 No. 2, Mar.-Apr. 2002.
Kuo et al., Nitride-based Near-Ultraviolet LEDs with an ITO Transparent Contact, Materials Science and Engineering, vol. B106, pp. 69-72, 2004.
Gardner et al., High-Flux and High Efficiency Nitride-Based Light Emitting Diodes, IEEE, pp. 641-642, 2002.
Craford, M. George, Visible LEDs: The Trend Toward High Power Emitters and Remaining Challenges for Solid State Lighting, Solid State Lighting II, Proc. of SPIE, vol. 4776, 2002.
Niki et al., White LEDs for Solid State Lighting, Third International Conference on Solid State Lighting, Proc. of SPIE, vol. 5187, 2004.
Tadamoto et al., High Output Power Near-Ultraviolet and Violet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates Using Metalorganic Vapor Phase Epitaxy, Third Intl. Conference on Solid State Lighting, Proc. of SPIE, vol. 5187, 2004.
Mukai et al., Recent Progress of Nitride-Based Light Emitting Devices, Phys. Stat. Sol. vol. 200, No. 1, pp. 52-57, 2003.
Mukai et al., GaN-based Light-Emitting Diodes Suitable for White Light, Light Emitting Diodes: Research, Manufacturing, and Applications VII, Proc. of SPIE, vol. 4996, 2003.
Morita et al., Over 200 mW on 365 nm Ultraviolet Light Emitting Diode of GaN-free Structure, Phys. Stat. Sol., vol. 200, No. 1, pp. 114-117, 2003.
United Epitaxy Company, Ltd., Specifications Confirmation Letter, 4713DC AlInGaN Blue LED Chip, 2003.
Labsphere, The Radiometry of Light Emitting Diodes-Technical Guide.
Epitech Technology Corporation, Traffic Green LED Chip, Dec. 2003.
Seoul Semiconductor Co. Ltd., AlInGaN LED Dice, 2003.
Epitech Technology Corporation, Near Blue LED Chip, Dec. 2003.
Unity OPTO Technology Co., Ltd., AlGaAs/GaAs High Power T-1 ¾ Package Infrared Emitting Diode, Nov. 17, 2000.
Nichia Corporation, White LED Analysis, Mar. 17, 2004.
Instrument Systems, LED Station, MAS 40 Turn-key System for LED Testing.
Bulman, G.E., et al ; “Nitride Lasers on SiC Substrates,” Lasers and Electro-Optics Annual Meeting, ISBN 0-7803-4947-4, IEEE, Dec. 1, 1998, vol. 2, pp. 348-349.
Windisch R, et al; “40% Efficient Thin-Film Surface-Textured Light-Emitting Dios by Optimization of Natural Lithography,” IEEE Transactions on Electron Devices, ISSN: 0018-9383, vol. 47 No. 7, Jul. 2000 pp. 1492-1498.
Nakamura S, et al; “Superbright Green Ingan Single-Quantum-Well-Structure Light-Emitting Diodes,” Japanese Journal of Applied Physics, ISSN: 0021-4922, vol. 34., No. 10B, Part 2, Oct. 15, 1995, pp. L1332-L1335.
Labsphere, The Radiometry of Light Emitting Diodes-Technical Guide, 2000.
Unity Opto Technology Co., Ltd., AlGaAs/GaAs High Power T-1 3/4 Package Infrared Emitting Diode, Nov. 17, 2000.
Instrument Systems, LED Station, MAS 40 Turn-key System for LED Testing, Jan. 31, 2008.
Bergmann Michael J.
Edmond John Adam
Emerson David T.
Haberern Kevin Ward
Cree Inc.
Louie Wai-Sing
Myers Bigel Sibley & Sajovec P.A.
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