High negative zeta potential polyhedral silsesquioxane...

Cleaning and liquid contact with solids – Processes – Including application of electrical radiant or wave energy...

Reexamination Certificate

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C134S002000, C134S022140, C134S022190, C510S175000, C510S176000, C510S367000, C510S372000, C510S466000, C510S504000, C423S325000

Reexamination Certificate

active

07976638

ABSTRACT:
A composition for removing particulate matter from integrated circuit substrates, including (a) one or more metal ion-free base; (b) a water-soluble metal ion-free onium salt of a polyhedral silsesquioxane; (c) an oxidizing agent; and (d) metal ion-free water, and a composition obtained by combining ingredients including (a), (b), (c) and (d). A process for removing particulate matter from a surface of an integrated circuit device, including applying to the surface the composition including (a), (b), (c) and (d) or applying to the surface the composition obtained by combining ingredients including (a), (b), (c) and (d).

REFERENCES:
patent: 5047492 (1991-09-01), Weidner et al.
patent: 5466389 (1995-11-01), Ilardi et al.
patent: 5561105 (1996-10-01), Honda
patent: 5759973 (1998-06-01), Honda et al.
patent: 5817610 (1998-10-01), Honda et al.
patent: 5935871 (1999-08-01), Farkas et al.
patent: 6020292 (2000-02-01), Honda et al.
patent: 6066609 (2000-05-01), Martin et al.
patent: 6261466 (2001-07-01), Bayes et al.
patent: 6465403 (2002-10-01), Skee
patent: 6475966 (2002-11-01), Sahbari
patent: 6554912 (2003-04-01), Sahbari
patent: 6585825 (2003-07-01), Skee
patent: 6599370 (2003-07-01), Skee
patent: 6794305 (2004-09-01), Funabashi
patent: 2004/0220065 (2004-11-01), Hsu
patent: 2004/0220066 (2004-11-01), Rutter, Jr.
patent: 2005/0142054 (2005-06-01), Hasegawa et al.
patent: 2005/0197265 (2005-09-01), Rath et al.
patent: 2005/0227893 (2005-10-01), Johnson et al.
patent: 2006/0089280 (2006-04-01), Vos et al.
patent: 2006/0113506 (2006-06-01), Man et al.
patent: 2006/0226122 (2006-10-01), Wojtczak
patent: 2007/044446 (2007-04-01), None
“Zeta Potential: A Complete Course in 5 Minutes”; Zeta-Meter, Inc.; 8 pages; date unknown.
Singer; “Damage During Cleans Evaluated by AFM”; Seminconductor International; Nov. 7, 2007; 2 pp.
Kinrade et al.; “Silicon 29 NMR Studies of Tetraalkylammonium Silicate Solutions. 1. Equilibria,29Si Chemical Shifts, and29Si Relaxation”;Inorg. Chem.;1998, 37, pp. 4272-4277.
Hoebbel et al.; “Di Konstitution des tetramethylammoniumsilicats der Zusammensetzung 1,0 N(CH3)4OH •1,0 SiO2•8,0-8,3 H2O”;Z. anorg. allg. Chem.384, 43-52; 1971.
Busnaina et al.; “Ultrasonic and Megasonic Particle Removal”; Precision Cleaning '95 Proceedings; pp. 347-360.
Busnaina et al.; “Nano and Microscale Particle Removal”; Northeastern University; Microcontamination Research Lab; Date Unknown; 23 pages.
Chen et al.; “Mechanism of Particle Deposition on Silicon Surface during Dilute HF Cleans”;Journal of The Electrochemical Society,150 (11) G667-G672; 2003.
International Search Report and Written Opinion of International Searching Authority; Application No. PCT/US2008/083161; mailed Apr. 21, 2009.

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