High mobility transistor with opposed-gates

Fishing – trapping – and vermin destroying

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437 40, 437203, 357 233, 357 22, H01L 2980

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active

048393100

ABSTRACT:
Horizontal and vertical transistors, such as, HEMT/SDHT devices are described with opposed gates for preventing substrate leakage current along with the methods for making same. Also a process for making single gate angled V-HEMT devices is described.

REFERENCES:
patent: 3823352 (1974-07-01), Pruniaux et al.
patent: 4163237 (1979-07-01), Dingle et al.
patent: 4215356 (1980-07-01), Kato
patent: 4424525 (1984-01-01), Mimura
patent: 4466008 (1984-08-01), Beneking
patent: 4568958 (1986-02-01), Baliga
patent: 4636824 (1987-01-01), Ikomo et al.
patent: 4641161 (1987-02-01), Kim et al.
patent: 4663643 (1987-05-01), Mimura
patent: 4677457 (1987-06-01), Wolter
patent: 4688061 (1987-08-01), Sakaki
patent: 4698654 (1987-10-01), Kohn
Kizilyalli et al., COMPEL 6:93-97 (1987), "Dynamics of Electron Transfer Between Two Adjacent Channels as Calculated by an Ensemble Monte Carlo Method".
"Fabrication Technology for Monolithic GaAs VFET's", Clarke et al., Proceedings IEEE/Cornell Conference on Advanced Concepts in high speed semiconductor devices and circuits, (1987).
Gallium Arsenide Technology, Howard W. Sams & Co., Inc., Chapter 4, (1985).
Geis et al., J. Vac. Sci. Technol. 19:1390 (1981), "A Novel Anisotropic Dry Etching Technique".
Lincoln et al., J. Vac. Sci. Technol. B1, 1043 (1983), "Large Area Ion Beam Assisted Etching of GaAs with High Etch Rates and Controlled Anisotropy".
Goodhue et al., in Gallium Arsenide and Related Compounds 1986, Lindley (ed), Inst. Phys. Conf. Ser. 83 Briston, 1987, p. 349 "Angular Chlorine Ion-Beam-Assisted Etching of GaAs and AlGaAs".
Nulman et al., Proceedings IEEE/Cornell Conference on Advanced Concepts in Highspeed Semicondutor Devices and Circuits 271-279, (1985).
Asai et al., Appl. Phys. Lett. 51:1518-1520 (1987), "Narrow Two-Dimensinal Electron Gas Channels in GaAs/AlGaAs Sidewall Interfaces by Selective Growth".
Frensley et al., IEEE Transactions on Electron Devices 32:952-956 (1985), "Design and Fabrication of a GaAs Vertical MESFET".
Mishra et al., IEDM Tech. DIG. 594-597 (1982), "Submicron GaAs Vertical Electron Transistor".
Luryi and Capasso, Appl. Phys. Lett. 47:1347-1349 (1985), "Resonant Tunneling of Two-Dimensional Electrons Through a Quantum Wire: a Negative Transconductance Device".

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