High-mobility amorphous silicon displaying non-dispersive transp

Details High-mobility amorphous silicon displaying non-dispersive transp High-mobility amorphous silicon displaying non-dispersive transp

1980-05-09

1985-10-08

Weisstuch, Aaron

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

136258, 357 2, 357 30, 357 15, 427 74, 427 84, 427 86, B05D 512, H01L 3118

Patent

active

045460094

ABSTRACT:
The present invention teaches a combination of parameters for the glow discharge decomposition of silane deposition of an amorphous silicon semiconductor having non-dispersive high mobility transport of majority carriers through the semiconductor material, useful in switching devices such as diodes, transistors and the like.

REFERENCES:
patent: 4064521 (1977-12-01), Carlson
patent: 4069492 (1978-01-01), Pankove et al.
A. R. Moore, "Electron And Hole Drift Mobility In Amorphous Silicon", Appl. Phys. Lett., vol. 31, pp. 762-764 (1977).
W. E. Spear et al., "Investigation Of The Localised State Distribution In Amorphons Si Films", J. Non-Crystalline Solids, vols. 8-10, pp. 727-738 W. Fuhs et al., Physica Status Solidi B. vol. 89, 495 (1978).
R. Williams et al., "Carrier Generation Recombination & Transport In Amorphous Silicon Solar Cells", RCA Review, vol. 40, pp. 371-389 (1979).
J. Jang et al., Solar Energy Materials, vol. 7, pp. 377-384 (1982).
B. W. Faughnan et al., Appl. Phys. Lett. vol. 44, pp. 537-539 (1984).
D. Allan, Philosophical Magazine B, vol. 38, pp. 381-392 (1978).

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