High magnetoresistance spin valve sensor with self-pinned...

Details High magnetoresistance spin valve sensor with self-pinned... High magnetoresistance spin valve sensor with self-pinned...

2006-07-25

2006-07-25

Castro, Angel (Department: 2653)

Dynamic magnetic information storage or retrieval

Head

Magnetoresistive reproducing head

Reexamination Certificate

active

07082017

ABSTRACT:
A spin valve sensor includes a spacer layer which is located between a free layer and an antiparallel (AP) pinned layer structure wherein the AP pinned layer structure includes an antiparallel coupling layer which is located between and interfaces first and second AP pinned layers with the second AP pinned layer interfacing the spacer layer. Each of the first and second AP pinned layers is composed of cobalt iron (CoFe) wherein the iron (Fe) content in the cobalt iron (CoFe) of one of the first and second AP pinned layers is greater than the iron (Fe) content in the cobalt iron (CoFe) in the other one of the first and second AP pinned layers.

REFERENCES:
patent: 6313973 (2001-11-01), Fuke et al.
patent: 6469926 (2002-10-01), Chen
patent: 6751072 (2004-06-01), Freitag et al.

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