High luminance thin-film electroluminescent device

Details High luminance thin-film electroluminescent device High luminance thin-film electroluminescent device

1994-11-18

1996-09-10

Nold, Charles R.

Stock material or miscellaneous articles

Composite

Of inorganic material

428691, 428917, 313506, 313503, 313509, 427157, 427 66, 4272552, 4272553, H05B 3302

Patent

active

055544495

ABSTRACT:
A high luminance thin-film electroluminescent device comprising a phosphor layer comprising SrS as the host material and a luminous center. The phosphor layer is sandwiched between two insulating layers and two thin-film electrodes are provided on each side of the insulating layers. At least one of the electrodes is transparent, and the excitation spectrum of the phosphor layer exhibits a peak having a maximum value at a wavelength of about from 350 nm to 370 nm. Such a high luminance thin-film electroluminescent device can be prepared by annealing its phosphor layer comprising SrS as the host material at a temperature of at least 650 .degree. C. for at least one hour in an atmosphere of a sulfur-containing gas.

REFERENCES:
patent: 4751427 (1988-06-01), Barrow et al.
patent: 4777099 (1988-10-01), Mimura et al.
Inoguchi et al., "Stable High-Brightness Thin-Film Electroluminescent Panels", p. 84 (1974).
Russ et al., "The Effects of Double Insulating Layers on the Electrolumnesece if Evaporated ZnS:Mn Films", p. 1066 (1967).
"Fabrication and Characterization of CaS and SrS Multi-Color Electroluminescent Thin Film Devices", p. 991 (1986).
"Red and Blue Electroluminescence and Alkaline-Earth Sulfide Thin-Film Devices", p. 29 (1986).
"Oxygen Contamination in SrS:Ce Thin-Film Electroluminescent Device", p. L1923 (1988).

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