Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...
Reexamination Certificate
2006-08-08
2006-08-08
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
In combination with or also constituting light responsive...
C257S079000, C257S084000, C257S096000, C257SE25032
Reexamination Certificate
active
07087931
ABSTRACT:
A high luminance indium gallium aluminum nitride light emitting diode (LED) is disclosed, including a substrate, a first conductive type nitride layer, an active layer, a second conductive type nitride layer, a first contact layer, a second contact layer, and a conductive transparent layer. The first contact layer has a first bandgap and a first doping concentration, and is disposed on the second conductive type nitride layer. The second contact layer has a second bandgap and a second doping concentration, and is disposed on the first contact layer. The first doping concentration and the second doping concentration are respectively larger than a predetermined concentration, and the first bandgap is smaller than the second bandgap. The second contact layer is thinner than a predetermined thickness so that a tunneling effect occurs between the conductive transparent layer and the second contact layer while the LED is in operation.
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Huang Pao-i
Tu Chung-Cheng
Wu Jen-Chau
Epistar Corporation
Flynn Nathan J.
Ingrassia Fisher & Lorenz
Wilson Scott R.
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