Amplifiers – With semiconductor amplifying device – Including plural stages cascaded
Reexamination Certificate
2007-05-11
2009-06-02
Pascal, Robert (Department: 2817)
Amplifiers
With semiconductor amplifying device
Including plural stages cascaded
C330S098000, C330S133000
Reexamination Certificate
active
07541875
ABSTRACT:
Embodiments of a high-linearity low-noise amplifier (LNA) and method are generally described herein. Other embodiments may be described and claimed. In some embodiments, an RF input signal may be amplified with a cascode amplifier and a common-gate stage. The common-gate stage is dynamically biased based on an output voltage of the common-gate stage to allow an output voltage swing to be shared between the cascode amplifier and the common-gate stage.
REFERENCES:
patent: 6177837 (2001-01-01), Aoki et al.
patent: 7276976 (2007-10-01), Oh et al.
Duster Jon S.
Taylor Stewart S.
Gorrie Gregory J.
Intel Corporation
Nguyen Hieu P
Pascal Robert
Schwegman Lundberg & Woessner, P.A.
LandOfFree
High-linearity low noise amplifier and method does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with High-linearity low noise amplifier and method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High-linearity low noise amplifier and method will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4061246