Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure
Reexamination Certificate
2006-01-06
2010-11-30
Shingleton, Michael B (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
C257S560000, C257S561000, C257S564000
Reexamination Certificate
active
07843038
ABSTRACT:
Variable gain amplifiers offering high frequency response with improved linearity and reduced power dissipation are provided. An amplifier is disclosed that is constructed from a one-stage topology with multiple signal paths and compensation networks for improved linearity and stable operation. In this amplifier, improved performance is obtained by replacing single transistor components with enhanced active devices which incorporate local negative feedback. One embodiment of the invention is a transconductance enhancement circuit that improves transconductance and input impedance relative to the prior art. A further development is an enhanced active cascode circuit that provides improved linearity. A high frequency bipolar transistor switch is also disclosed that incorporates lateral PNP transistors as high frequency switches with improved OFF-state to ON-state impedance ratio to realize a variable gain function. These circuits are combined in an amplifier circuit that provides variable gain and high frequency performance, with improved linearity, gain, and input impedance.
REFERENCES:
patent: 2929006 (1960-03-01), Herlet
patent: 3657609 (1972-04-01), Oswald et al.
patent: 4728905 (1988-03-01), Zhiwei
patent: 4807009 (1989-02-01), Fushimi et al.
patent: 5859568 (1999-01-01), Le et al.
patent: 6278328 (2001-08-01), Yamamoto
patent: 61-274407 (1986-12-01), None
patent: 63-175510 (1988-07-01), None
patent: 11-514193 (1999-11-01), None
patent: 2000-341052 (2000-12-01), None
Jacob Millman; Microelectronics ; McGraw Hill Book Company, 1979 p. 69.
Sedra et al. “Microelectronic Circuits,” 5thedition Oxford University Press 2004, pp. 801-807 and 864-865.
Japanese Notice of Reasons for Rejection, w/ English translation thereof, issued in Japanese Patent Application No. JP 2003-293957 dated May 21, 2009.
Partial European Search Report issued in European Patent Application No. 03017664.8-1233, mailed May 17, 2010.
Lu, J.Q., et al., “Stochastic Interpolation Model Scheme and Its Application to Statistical Circuit Analysis”, 2334a IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences, Mar. 1994, pp. 447-453, vol. E77-A, Tokyo Japan.
Linear Technology Corporation
McDermott Will & Emery LLP
Shingleton Michael B
LandOfFree
High linearity digital variable gain amplifier does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with High linearity digital variable gain amplifier, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High linearity digital variable gain amplifier will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4206586