High level integration phase change memory device having an...

Details High level integration phase change memory device having an... High level integration phase change memory device having an...

2008-12-30

2010-11-30

Ngo, Ngan (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S537000, C257SE27047, C257SE29326, C438S384000, C438S385000

Reexamination Certificate

active

07843037

ABSTRACT:
A phase change memory device includes a semiconductor substrate active region, a plurality of first conductivity type silicon pillars, and a plurality of second conductivity type silicon patterns. The plurality of first conductivity type silicon pillars is formed on the semiconductor active region such that each first conductivity type silicon pillar is provided for two adjoining cells. The plurality of second conductivity type silicon patterns is formed on the plurality of first conductivity type silicon pillars such that two second conductivity type silicon patterns are formed on opposite sidewalls of each first conductivity type silicon pillars. Two adjoining cells together share only one first conductivity type silicon pillar and each adjoining cell is connected to only one second conductivity type silicon pattern which constitutes a PN diode which serves as a single switching element for each corresponding cell.

REFERENCES:
patent: 7619311 (2009-11-01), Lung
patent: 7755093 (2010-07-01), Ohara
patent: 2009/0200537 (2009-08-01), Chang et al.
patent: 2009/0207576 (2009-08-01), Gardner et al.
patent: 2009/0251944 (2009-10-01), Happ et al.
patent: 2010/0072447 (2010-03-01), Lung
patent: 2010/0133500 (2010-06-01), Lung
patent: 2010/0200829 (2010-08-01), Dennison et al.

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