Semiconductor device manufacturing: process – Making passive device – Stacked capacitor
Reexamination Certificate
2000-05-09
2001-07-17
Smith, Matthew (Department: 2825)
Semiconductor device manufacturing: process
Making passive device
Stacked capacitor
C438S317000, C438S624000
Reexamination Certificate
active
06261917
ABSTRACT:
BACKGROUND OF THE INVENTION
(1) Field of the Invention
The present invention relates to a method of fabricating a metal-oxide-metal capacitor, and more particularly, to a method of forming an improved metal-oxide metal capacitor having high dielectric constant in the fabrication of an integrated circuit device.
(2) Description of the Prior Art
Capacitors are critical components in the integrated circuit devices of today. As devices become smaller and circuit density increases, it is critical that capacitors maintain their level of capacitance while taking up a smaller floor area on the circuit. A high dielectric constant for the capacitor will allow a smaller floor area capacitor to have the same capacitance and will also result in the desirable lowering of tunneling current density. Reducing circuit floor plan can improve circuit density.
U.S. Pat. No. 5,275,715 to Tuttle s hows a TiO
x
etch stop layer formed by reaction with O
2
or O
3
. U.S. Pat. No. 5,716,875 to Jones, Jr. et al shows a capacitor having a TiO
2
/Pt layer. U.S. Pat. No. 4,481,288 to Kerr et al discloses a MOM capacitor having an AlO
x
Layer. U.S. Pat. No. 5,953,609 to Koyama et al shows a polysilicon capacitor having a TiO
x
layer. U.S. Pat. No. 5,350,705 to Brassington et al discloses a TiO
x
layer under the bottom plate of a MOM capacitor and a ruthenium oxide capacitor dielectric. U.S. Pat. No. 5,948,216 to Cava et al teaches a MOM capacitor having a Ta
2
O
5
/TiO
2
dielectric layer. Many of these methods involve high temperature operations to form the dielectric layers. It is desired to provide a room temperature method of forming the capacitor dielectric layer.
SUMMARY OF THE INVENTION
Accordingly, it is a primary object of the invention to provide an effective and very manufacturable process for producing a metal-oxide-metal capacitor.
Another object of the present invention is to provide a method for fabricating a metal-oxide-metal capacitor having a high dielectric constant.
Yet another object of the present invention is to provide a room temperature method for fabricating a metal-oxide-metal capacitor having a high dielectric constant.
A further object of the present invention is to provide a method for fabricating a metal-oxide-metal capacitor having a titanium oxide capacitor dielectric.
In accordance with the objects of this invention, a method for fabricating a metal-oxide-metal capacitor is achieved. A first insulating layer is provided overlying a semiconductor substrate. A barrier metal layer and a first metal layer are deposited over the insulating layer. A titanium layer is deposited overlying the first metal layer. The titanium layer is exposed to an oxidizing plasma while simultaneously a portion of the titanium layer where the metal-oxide-metal capacitor is to be formed is exposed to light whereby the portion of the titanium layer exposed to light reacts with the oxidizing plasma to form titanium oxide. Thereafter, the titanium layer is removed, leaving the titanium oxide layer where the metal-oxide-metal capacitor is to be formed. A second metal layer is deposited overlying the first metal layer and the titanium oxide layer. The second metal layer, titanium oxide layer, and first metal layer are patterned to form a metal-oxide-metal capacitor wherein the second metal layer forms an upper plate electrode, the titanium oxide layer forms a capacitor dielectric, and the first metal layer forms a bottom plate electrode of the MOM capacitor.
REFERENCES:
patent: 4481283 (1984-11-01), Kerr et al.
patent: 5275715 (1994-01-01), Tuttle
patent: 5350705 (1994-09-01), Brassington et al.
patent: 5622607 (1997-04-01), Yamazaki et al.
patent: 5716875 (1998-02-01), Jones, Jr. et al.
patent: 5948216 (1999-09-01), Cava et al.
patent: 5953609 (1999-09-01), Koyama et al.
patent: 6100155 (2000-08-01), Hu
Ang Ting Cheong
Loong Sang Yee
Ong Puay Ing
Quek Shyue Fong
Anya Igwe U.
Chartered Semiconductor Manufacturing Ltd.
Pike Rosemary L. S.
Saile George O.
Smith Matthew
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