Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device
Reexamination Certificate
2006-03-28
2009-06-02
Lee, Hsien-ming (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
C438S287000, C257SE21269, C257SE21271, C257S262000, C257S274000
Reexamination Certificate
active
07541626
ABSTRACT:
A transparent thin film transistor device includes a transparent substrate, and a high dielectric constant insulator layer disposed over the transparent substrate at a defined temperature. A transparent semiconductor layer is disposed over the insulator layer.
REFERENCES:
patent: 6207472 (2001-03-01), Callegari et al.
patent: 6358378 (2002-03-01), Choi et al.
patent: 6720119 (2004-04-01), Ohtsu et al.
patent: 6727522 (2004-04-01), Kawasaki et al.
patent: 6878962 (2005-04-01), Kawasaki et al.
patent: 2002/0060325 (2002-05-01), Yano et al.
patent: 2002/0086507 (2002-07-01), Park et al.
patent: 2003/0218222 (2003-11-01), Wager, III et al.
patent: 2004/0056273 (2004-03-01), Nause et al.
patent: 2006/0115964 (2006-06-01), Findikoglu et al.
“Enhancement-mode thin-film field-effect transistor using phosphorus-doped (Zn, MG)O channel”; Jwib et al., Applied Physics Letters; vol. 84, No. 14; pp. 2685-2687, Apr. 5, 2004.
“ZnO-channel thin-film transistors: Channel mobility”; Hoffman et al.,; Journal of Applied Physics; vol. 95, No. 10; May 15, 2004; pp. 5813-5819.
“All oxide transparent MISFET using high-k dielectrics gates”; Nomura et al.,; Micro Electronic Engineering; pp. 294-298.
“Low-voltage ZnO thin-film transistors with high-k Bi1.5Zn1.0Nb1.5O7gate insulator for transparent and flexible electronics”; Kim et al.,; Applied Physics Letters 87; 2005 American Institute of Physics.
“Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature”; Fortunato et al.,; Applied Physics Letters; vol. 85, No. 13; Sep. 27, 2004; pp. 2541-2543.
“Transparent conducting zinc oxide thin film prepared by off-axis rf magnetron sputtering”; Jayaraj et al.,; Indian Academy of Sciences; vol. 25, No. 3, Jun. 2002; pp. 227-230.
“Fully transparent ZnO Thin-Film Transistor Produced at Room Temperature”; Fortunato et al.,; Advanced Materials; Adv. Mater. 2005, vol. 17, No. 5; pp. 590-594.
Kim Il-Doo
Tuller Harry L.
Gauthier & Connors LLP
Lee Hsien-ming
Massachusetts Institute of Technology
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