High-k gate dielectrics prepared by liquid phase anodic...

Details High-k gate dielectrics prepared by liquid phase anodic... High-k gate dielectrics prepared by liquid phase anodic...

2005-05-03

2005-05-03

Hiteshew, Felisa (Department: 1765)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth with a subsequent step acting on the...

C117S003000, C438S591000, C438S678000, C438S785000

Reexamination Certificate

active

06887310

ABSTRACT:
A method of preparing high-k gate dielectrics by liquid phase anodic oxidation, which first produces a metallic film on the surface of a clean silicon substrate, next oxidizes the metallic film to form a metallic oxide as a gate oxidizing layer by liquid phase anodic oxidation, then promoting quality of the gate oxidizing layer by processing a step of thermal annealing. With this oxidation, a gate dielectric layer of high quality, high-k and ultrathin equivalent oxide thickness (EOT) can be produced, which can be integrated into a complementary metal oxide semiconductor (CMOS) production process directly.

REFERENCES:
patent: 6300203 (2001-10-01), Buynoski et al.
patent: 6465334 (2002-10-01), Buynoski et al.
patent: 6559051 (2003-05-01), Buynoski et al.

Affiliated with

Also associated with

Rating

High-k gate dielectrics prepared by liquid phase anodic... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High-k gate dielectrics prepared by liquid phase anodic..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High-k gate dielectrics prepared by liquid phase anodic... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3432327