High isolation passive switch

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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Details

3073032, 3074821, 307542, 307594, 307596, 333262, H03K 3013, H03K 1708, H03K 17687, H01P 115

Patent

active

050234943

ABSTRACT:
A radio frequency switch disposed over a substrate having ground plane conductors disposed over an opposite surface thereof is described. The switch has at least two terminals, and includes a plurality of pairs of transistors, each one of said transistors coupled between a reference potential and a common transmission line which is coupled to one of the pair of terminals. A pair of topside conductors are disposed over the substrate to couple the transistors through plated vias to a bottom ground plane conductor. The switch further includes a series connected transistor disposed between the r.f. line and a second one of the terminals of the circuit.

REFERENCES:
patent: 4939485 (1990-07-01), Eisenberg
M. J. Reid, "Microwave Switch and Attenuator Modules," Microwave Journal, Jul. 1973, pp. 145-148.
"Pin Diode Switch Basics," Technical Feature from MSN, Jun. 1989, p. 41.
"Non-Reflective and Reflective SPDT Switches with Integral Drivers," Alpha Industries, Inc. Technical Specification, pp. 9-12.

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