High inverse gain transistor

Details High inverse gain transistor High inverse gain transistor

1974-05-10

1976-05-25

James, Andrew J.

357 20, 357 35, H01L 2906, H01L 2972

Patent

active

039598098

ABSTRACT:
A high inverse gain semiconductor device including a one conductivity semiconductor substrate having a major surface and a buried region formed in said substrate of relatively high concentration one conductivity impurities extending to said major surface. A one conductivity semiconductor layer is formed on said major surface, said layer having a planar surface. An opposite conductivity base region is formed in said layer overlying said buried region and extends to said planar surface. The base region has an outwardly notched handle-shaped portion extending outward from said base region into said body and extending to said planar surface. A one conductivity additional region formed entirely within said opposite conductivity base region extends within said base region to form a relatively uniform base region exclusive of said handle-shaped portion having a relatively narrow base width between said additional region and said layer. The layer, base and additional region form a bilateral transistor capable of substantial forward gain when the additional region is utilized as an emitter and capable of relatively high inverse gain when said additional region is utilized as a collector.

REFERENCES:
patent: 3657612 (1972-04-01), Wiedmann

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