Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor
Patent
1996-05-22
1998-07-14
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Bipolar transistor
257188, 257189, 257198, H01L 310328, H01L 310336, H01L 31072, H01L 31109
Patent
active
057808805
ABSTRACT:
An optoelectronic semiconductor device using stimulated emission and absorption to achieve the functions of detection, modulation, generation and/or amplification of light. In one embodiment, the device includes a waveguide heterojunction bipolar transistor (HBT) biased in the active mode where the minority carrier concentration in the base is designed with bandgap engineering to optimize optical gain in this region. This HBT configuration allows optical modulation at considerably higher frequencies and/or with improved efficiency compared to the prior art, and is particularly suited to the fabrication of direct or external modulated wideband fiber optic links.
REFERENCES:
patent: 5552617 (1996-09-01), Hill et al.
Performance Evaluation of Heterojunction Bipolar Transistors Designed for High Optical Gain, P. Enquist et al., Research Triangle Institute, Research Triangle Park, N.C., Abstract-10 pages.
Optical Intensity Modulator for Integrated Optics by use of a Heterojunction Bipolar Transistor Waveguide Structure, Yoshitaka Okada et al., Appl. Phys. Lett. 55(25), 18 Dec. 1989, pp. 2591-2593.
The Effect of Band-Tails on the Design of GaAs/AlGaAs Bipolar Transistor Carrier-Injected Optical Modulator/Switch, Yoshitaka Okada et al., IEEE Journal of Quantum Electronics, vol. 25, No. 4, Apr. 1989, pp. 713-719.
Crane Sara W.
Research Triangle Institute
Wille Douglas A.
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