Coating apparatus – Gas or vapor deposition – With treating means
Patent
1996-04-22
1997-03-04
Breneman, R. Bruce
Coating apparatus
Gas or vapor deposition
With treating means
118723MP, C23C 1600
Patent
active
056075090
ABSTRACT:
A high dose rate, high impedance plasma ion implantation method and apparatus to apply high voltage pulses to a target cathode within an ionization chamber to both sustain a plasma in the gas surrounding the target, and to implant ions from the plasma into the target during at least a portion of each pulse. Operating at voltages in excess of 50 kV that are too high for the reliable formation of a conventional glow discharge, the plasma is instead sustained through a beam-plasma instability interaction between secondary electrons emitted from the target and a background pulsed plasma. The voltage pulses are at least about 50 kV, and preferably 100 kV or more. Pulse durations are preferably less than 8 microseconds, with a frequency in the 50-1,000 Hz range. The preferred gas pressure range is 1.times.10.sup.-4 -1.times.10.sup.-3 Torr; auxiliary electrodes can be used at the lower pressures to provide sufficient seed electrons for initiating a plasma, which is sustained by the beam-plasma instability interaction.
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Goebel Dan M.
Matossian Jesse N.
Schumacher Robert W.
Breneman R. Bruce
Chang Joni Y.
Denson-Low Wanda K.
Duraiswamy Vijayalakshimi D.
Hughes Electronics
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