High hydrogen amorphous silicon

Details High hydrogen amorphous silicon High hydrogen amorphous silicon

1983-05-13

1984-05-29

Pianalto, Bernard D.

Stock material or miscellaneous articles

Composite

Of silicon containing

427 39, 427 85, 427 87, 427 95, B32B 904

Patent

active

044515383

ABSTRACT:
Amorphous silicon having a high band gap is formed by glow discharge in an atmosphere containing H.sub.2 and SiH.sub.4 in a ratio of at least approximately 9 to 1. The partial pressure of H.sub.2 and SiH.sub.4 is preferably no more than 1 torr, and the power density of the discharge is preferably no more than 0.08 watts per square centimeter. In the intrinsic form, the material of the present invention has a band gap of approximately 1.95 electron volts (eV). Similar p-type material, formed by adding B.sub.2 H.sub.6 to the gas atmosphere at approximately 500 parts per million (ppm), has a band gap as high as 1.90 eV.

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