High-heat-resistant semiconductor device

Details High-heat-resistant semiconductor device High-heat-resistant semiconductor device

2007-10-23

2009-06-30

Jackson, Jr., Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Organic semiconductor material

Reexamination Certificate

active

07554114

ABSTRACT:
In a wide gap semiconductor device of SiC or the like used at a temperature of 150 degrees centigrade or higher, the insulation characteristic of a wide gap semiconductor element is improved and a high-voltage resistance is achieved. For these purposes, a synthetic high-molecular compound, with which the outer surface of the wide gap semiconductor element is coated, is formed in a three-dimensional steric structure which is formed by linking together organosilicon polymers C with covalent bonds resulting from addition reaction. The organosilicon polymers C have been formed by linking at least one organosilicon polymers A having a crosslinked structure using siloxane (Si—O—Si combination) with at least one organosilicon polymers B having a linear linked structure using siloxane through siloxane bonds.

REFERENCES:
patent: 5612399 (1997-03-01), Beckley et al.
patent: 2002/0004251 (2002-01-01), Roberts et al.
patent: 2002/0057057 (2002-05-01), Sorg
patent: 2002/0122946 (2002-09-01), Kuck et al.

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