Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2004-07-20
2009-02-10
Jackson, Jr., Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C257S077000, C257SE51020
Reexamination Certificate
active
07488973
ABSTRACT:
In a wide gap semiconductor device of SiC or the like used at a temperature of 150 degrees centigrade or higher, the insulation characteristic of a wide gap semiconductor element is improved and a high-voltage resistance is achieved. For these purposes, a synthetic high-molecular compound, with which the outer surface of the wide gap semiconductor element is coated, is formed in a three-dimensional steric structure which is formed by linking together organosilicon polymers C with covalent bonds resulting from addition reaction. The organosilicon polymers C have been formed by linking at least one organosilicon polymers A having a crosslinked structure using siloxane (Si—O—Si combination) with at least one organosilicon polymers B having a linear linked structure using siloxane through siloxane bonds.
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Crowell & Moring LLP
Ho Anthony
Jackson, Jr. Jerome
The Kansai Electric Power Co. Inc.
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