Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure
Patent
1995-02-28
1997-01-28
Tran, Minhloan
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Light responsive structure
257201, 257462, 257463, 257464, 250372, H01L 310328
Patent
active
055980147
ABSTRACT:
A photoconductor has an active layer of gallium nitride having approximately 10.sup.15 to 5.times.10.sup.15 net donor sites per cubic centimeter and is sensitive to UV radiation. This photoconductor has at least one of a sheet resistance in the approximate range of 10.sup.4 to 5.times.10.sup.6 ohms/unit area and a relatively low level of photoluminescence in the range from about 430-450 nm when excited with light of energy higher than the bandgap energy of 3.4 eV. These criteria tend to define similar semiconductor materials which can form the active layer of an ultraviolet (UV) photodetector having the improved characteristics of a relatively low dark resistance, high sensitivity over at least a range of UV radiation intensity, and decreasing gain with increasing UV radiation.
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Murakami et al., "Growth of Si-doped AlxGa1-xN on (0001) sapphire substrate by metalorganic vapor phase epitaxy", Journal of Crystal Growth 115, 648-651.
Nakamura et al., "Si-and Ge-doped GaN films grown with GaN buffer layers", Jap. J. Appl. Phys. vol. 31, 2883-2888.
Khan et al., "High responsivity photoconductive ultraviolet sensors based on insulating single-crystal GaN epilayers", Appl. Phys. Lett. vol. 60, No. 23, 2917-2919.
Barany Barbara G.
Reimer Scott T.
Ulmer Robert P.
Zook J. David
Honeywell Inc.
Schwarz Edward L.
Tran Minhloan
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