High-gain Si/SiGe MIS heterojunction bipolar transistors

Details High-gain Si/SiGe MIS heterojunction bipolar transistors High-gain Si/SiGe MIS heterojunction bipolar transistors

1993-03-29

1995-02-14

Loke, Steven Ho Yin

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

257198, 257565, 257616, H01L 31072, H01L 31109, H01L 27082, H01L 31117

Patent

active

053898036

ABSTRACT:
A Metal Insulator Semiconductor (MIS) heterojunction transistor. The MIS transistor is in a layered wafer having a n.sup.+ Si substrate, n Si collector layer, and a p Si/SiGe base. The base Si/SiGe interface may be vertical or horizontal. A thin oxide layer separates the base from the emitter, which is of a low work function metal such as Al, Mg, Mn, or Ti.

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