High-gain photodetectors made from NIPI mesas with selective lat

Details High-gain photodetectors made from NIPI mesas with selective lat High-gain photodetectors made from NIPI mesas with selective lat

1988-03-14

1989-06-13

Edlow, Martin H.

357 4, 357 67, 357 56, H01L 2348

Patent

active

048397148

ABSTRACT:
A selective contact to a NIPI doping superlattice having a trap free (or low trap density) contact in contact with the layers of the superlattice. In a NIPI superlattice, the trap free region is a doped region that can be produced: by diffusion of dopant ions from a doped metal contact; by overdoping of the edges of the superlattice; or by overgrowth of the edges of the superlattice with a doped material that is trap free.

REFERENCES:
patent: 4257055 (1981-03-01), Hess
patent: 4607272 (1986-08-01), Osburn
patent: 4645707 (1987-02-01), Davies

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