High-gain photodetector with separated PN junction and rare...

Details High-gain photodetector with separated PN junction and rare... High-gain photodetector with separated PN junction and rare...

2005-09-13

2005-09-13

Abraham, Fetsum (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

C438S048000

Reexamination Certificate

active

06943390

ABSTRACT:
The high-gain photodetector is formed in a semiconductor-material body which houses a PN junction and a sensitive region that is doped with rare earths, for example erbium. The PN junction forms an acceleration and gain region separate from the sensitive region. The PN junction is reverse-biased and generates an extensive depletion region accommodating the sensitive region. Thereby, the incident photon having a frequency equal to the absorption frequency of the used rare earth crosses the PN junction, which is transparent to light, can be captured by an erbium ion in the sensitive region, so as to generate a primary electron, which is accelerated towards the PN junction by the electric field present, and can, in turn, generate secondary electrons by impact, according to an avalanche process. Thereby, a single photon can give rise to a cascade of electrons, thus considerably increasing detection efficiency.

REFERENCES:
patent: 6340826 (2002-01-01), Iliadis
patent: 1 081 812 (2001-03-01), None
patent: 10-125940 (1998-05-01), None
Franzo, G. et al., “Mechanism and Performance of Forward and Reverse Bias Electroluminescence at 1.54 μm from Er-Doped Si Diodes,”Journal of Applied Physics, 81 (6):2784-2793, Mar. 15, 1997.
Coffa, S. et al., “Direct Evidence of Impact Excitation and Spatial Profiling of Excited Er in Light Emitting Si Dioides,”Applied Physics Letters, 73(1):93-95, Jul. 1998.

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