High gain mololithic microwave integrated circuit amplifier

Details High gain mololithic microwave integrated circuit amplifier High gain mololithic microwave integrated circuit amplifier

1991-10-29

1992-11-24

Mottola, Steven

Amplifiers

With semiconductor amplifying device

Including signal feedback means

330 99, 330306, H03F 134

Patent

active

051666391

ABSTRACT:
Linear high gain (greater than 20 dB) and high power (greater than +20 dbm) devices for RF power amplifiers are achieved using either fully monolithic or hybridized versions of silicon MMIC two-stage cascaded amplifiers. The device features three feedback loops in conjunction with a DC biasing network. Resistor-capacitor feedback circuits utilize only two capacitive elements which are provided as a single three-terminal element having a common lower plate.

REFERENCES:
patent: 3474349 (1969-10-01), Ellermeyer
patent: 4189681 (1980-02-01), Lawson et al.
patent: 4275453 (1981-06-01), Wagner
patent: 4290027 (1981-09-01), Parker

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