High gain K-band power amplifier with unconditionally stable MMI

Details High gain K-band power amplifier with unconditionally stable MMI High gain K-band power amplifier with unconditionally stable MMI

1995-11-03

1997-08-19

Mottola, Steven

Amplifiers

With semiconductor amplifying device

Including field effect transistor

330286, 330295, 330307, H03F 316, H03F 360, H03F 368

Patent

active

056592671

ABSTRACT:
A MMIC power amplifier (100) uses MMIC FET cells (104, 112) and provides high gain at microwave and millimeter-wave frequencies. The power amplifier includes an input matching network (102), a first plurality of unit FET cells (104) for amplifying in-phase signals provided by the input matching network, a second plurality of unit FET cells (112), an interstage matching network (106) for combining output signals provided by the first plurality of unit FET cells, and providing in-phase signals to the second plurality of unit FET cells; and a combiner (113) for combining output signals of the second plurality of unit FET cells to provide an output signal. The FET cells are designed to be unconditionally stable without the use of an external series gate resistance. The FET cells are combined to provide total device periphery suitable for output power levels exceeding 0.8 watt at frequencies ranging from 19 to 23.5 GHz. The FET cells are designed using device scaling and device modeling techniques. The power amplifier is suitable for applications where high efficiency and high gain are important, such as satellite communication systems.

REFERENCES:
patent: 4803443 (1989-02-01), Takagi et al.
patent: 5283452 (1994-02-01), Shih et al.
patent: 5519358 (1996-05-01), Tserng

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