High-gain, high-voltage transistor for linear integrated circuit

Details High-gain, high-voltage transistor for linear integrated circuit High-gain, high-voltage transistor for linear integrated circuit

1976-04-12

1977-09-06

James, Andrew J.

357 35, 357 37, 357 43, 357 48, H01L 2972, H01L 2900, H01L 2702

Patent

active

040472175

ABSTRACT:
A semiconductor structure for, and method of manufacture of, a linear integrated circuit provides the equivalent of a base function in a transistor, wherein the base function has a dual charge density, with the latter being relatively low in the lower active area of the base between PN junctions for high gain and high breakdown voltage, but high along the upper surface to prevent an unwanted inversion layer from occurring.

REFERENCES:
patent: 3684933 (1972-08-01), Schulz
patent: 3766446 (1973-10-01), Tarui et al.
patent: 3841918 (1974-10-01), Agraz-Guerena
patent: 3873383 (1975-03-01), Kooi
patent: 3962718 (1976-06-01), Inoue et al.
patent: 3971059 (1976-07-01), Dunkley et al.

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