Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure
Patent
1999-08-17
2000-10-24
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Light responsive structure
257185, 257187, 257462, 438 93, H01L 310328, H01L 310336, H01L 31072, H01L 31109
Patent
active
061371238
ABSTRACT:
A GaN/AlGaN heterojunction bipolar phototransistor having AlGaN contact, i-GaN absorbing, p-GaN base and n-GaN emitter layers formed, in that order, on a UV transparent substrate. The phototransistor has a gain greater than 10.sup.5. From 360 nm to 400 nm, eight orders of magnitude drop in responsivity was achieved. The phototransistor features a rapid electrical quenching of persistent photoconductivity, and exhibits high dark impedance and no DC drift. By changing the frequency of the quenching cycles, the detection speed of the phototransistor can be adjusted to accommodate specific applications. These results represent an internal gain UV detector with significantly improved performance over GaN based photo conductors.
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Article: "Back-Illuminated GaN/AIGaN heterojunction photodiodes with high quantum efficiency and low noise", Wei Yang, et al. 1998 American Institute of Physics, accepted for publication Jun. 11, 1998, pp. 1086-1088.
Krishnankutty Subash
Marsh Holly A.
McPherson Scott A.
Nohava Thomas E.
Torreano Robert C.
Honeywell International , Inc.
Mintel William
Shudy Jr. John G.
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