High gain composite transistor

Details High gain composite transistor High gain composite transistor

1980-07-24

1983-02-01

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307299B, 307315, 307313, 357 44, 357 46, 330257, H03K 1760, H03K 326, H01L 2702

Patent

active

043717926

ABSTRACT:
A composite transistor suitable for use in monolithic integrated circuits is characterized as having extremely high current gain, stable operation and low leakage current. Two vertical NPN transistors are coupled into a circuit configuration, along with two lateral PNP transistors, that has three terminals. These terminals behave as a single NPN transistor having characteristics that are superior to those of a conventional NPN transistor.

REFERENCES:
patent: 4122401 (1978-10-01), Sauer
patent: 4207478 (1980-06-01), Yamamoto et al.
patent: 4260906 (1981-04-01), Tokumaru et al.
patent: 4277696 (1981-07-01), Tokunaga et al.

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