Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Lateral bipolar transistor structure
Reexamination Certificate
2005-03-15
2005-03-15
Lee, Eddie (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Lateral bipolar transistor structure
C257S561000, C257S575000, C257S591000, C257S592000, C257S593000
Reexamination Certificate
active
06867477
ABSTRACT:
According to one exemplary embodiment, a bipolar transistor comprises a base having a top surface. The bipolar transistor might be a lateral PNP bipolar transistor and the base may comprise, for example, N type single crystal silicon. The bipolar transistor further comprises an emitter having a top surface, where the emitter is situated on the top surface of the base. The emitter may comprise P+ type single crystal silicon-germanium, for example. The bipolar transistor further comprises an electron barrier layer situated directly on the top surface of the emitter. The electron barrier layer will cause an increase in the gain, or beta, of the bipolar transistor. The electron barrier layer may be a dielectric such as, for example, silicon oxide. In another embodiment, a floating N+ region, instead of the electron barrier layer, is utilized to increase the gain of the bipolar transistor.
REFERENCES:
patent: 5510647 (1996-04-01), Nakajima et al.
patent: 5654211 (1997-08-01), Ham
patent: 5698890 (1997-12-01), Sato
patent: 5786622 (1998-07-01), Ronkainen
patent: 5789800 (1998-08-01), Kohno
patent: 6255716 (2001-07-01), Jeon
Racanelli Marco
Ye Peihua
Zheng Jie
Farjami & Farjami LLP
Gebremariam Samuel A
Lee Eddie
Newport Fab LLC
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