Amplifiers – With semiconductor amplifying device – Including field effect transistor
Patent
1982-12-23
1985-06-25
Mullins, James B.
Amplifiers
With semiconductor amplifying device
Including field effect transistor
330284, 330112, H03F 316, H03F 138, H03G 318
Patent
active
045256799
ABSTRACT:
A Metal-Oxide Semiconductor (MOS) high gain amplifying stage which overcomes the inherently low transconductance, gm, of MOS transistors is described. This is achieved by using a specially configured load transistor in combination with a driver transistor. The load transistor is provided, by means of positive feedback, with a current generator which is dependent on the output voltage of the stage and has an effective negative output conductance. The positive feedback is achieved by connecting an appropriate attenuation stage between the output and the input of the load transistor. By the cancellation of output conductances between the driver and load transistors, a near infinite voltage gain can be achieved despite resistive loading at the output of the amplifier. The MOS amplifying stage has application in amplifiers, comparators and oscillators. A complementary metal-oxide-semiconductor (CMOS) implementation has been realized but the principle is equally applicable to single channel (NMOS or PMOS) MOS technology.
REFERENCES:
patent: 3286189 (1966-11-01), Mitchell et al.
Salama Clement A. T.
Wong Stephen L.
Baker Joseph J.
Ferguson Jr. Gerald J.
Mullins James B.
The University of Toronto Innovations Foundation
Wan G.
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