High-gain amplifier with low noise and low power dissipation, us

Details High-gain amplifier with low noise and low power dissipation, us High-gain amplifier with low noise and low power dissipation, us

1990-05-11

1991-11-26

Mullins, James B.

Amplifiers

With semiconductor amplifying device

Including field effect transistor

330296, 330297, 330311, H03F 316

Patent

active

050686232

ABSTRACT:
The amplifier comprises a first field effect transistor controlled by the input signal of the amplifier and a current generator for the supply of said first transistor. The latter is biased so as to operate in its linear region and in cascade with it there is provided at least one second field effect transistor biased in a similar way, suitable for raising the output impedance of the amplifier, and thus its gain, to a value corresponding to the desired use.

REFERENCES:
patent: 4100438 (1978-07-01), Yokoyama
patent: 4952885 (1990-08-01), Devecchi et al.
Sherwin et al., "FETs As Constant-Current Sources," EEE, Oct. 1967, pp. 82-85.

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