High-gain AlGaAs/GaAs double heterojunction Darlington phototran

Details High-gain AlGaAs/GaAs double heterojunction Darlington phototran High-gain AlGaAs/GaAs double heterojunction Darlington phototran

1990-10-11

1991-06-25

Prenty, Mark

357 16, 357 17, 357 34, 357 30, H01L 2702, H01L 29161, H01L 3300, H01L 2972

Patent

active

050271822

ABSTRACT:
High-gain MOCVD-grown (metal-organic chemical vapor deposition) AlGaAs/GaAs/AlGaAs n-p-n double heterojunction bipolar transistors (DHBTs) (14) and Darlington phototransistor pairs (14, 16) are provided for use in optical neural networks and other optoelectronic integrated circuit applications. The reduced base (22) doping level used herein results in effective blockage of Zn out-diffusion, enabling a current gain of 500, higher than most previously reported values for Zn-diffused-base DHBTs. Darlington phototransistor pairs of this material can achieve a current gain of over 6,000, which satisfies the gain requirement for optical neural network designs, which advantageously may employ novel neurons (10) comprising the Darlington phototransistor pair in series with a light source (12).

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