High-frequency wireless communication system on a single ultrath

Details High-frequency wireless communication system on a single ultrath High-frequency wireless communication system on a single ultrath

1995-05-09

1996-02-20

Thomas, Tom

Fishing, trapping, and vermin destroying

437 62, 437 21, 437 25, 437 26, 437 84, 437973, H01L 2176

Patent

active

054928575

ABSTRACT:
A high-frequency wireless communication system on a single ultrathin silicon on sapphire chip is presented. This system incorporates analog, digital (logic and memory) and high radio frequency circuits on a single ultrathin silicon on sapphire chip. The devices are fabricated using conventional bulk silicon CMOS processing techniques. Advantages include single chip architecture, superior high frequency performance, low power consumption and cost effective fabrication.

REFERENCES:
patent: 4177084 (1979-12-01), Lau et al.
patent: 4198649 (1980-04-01), Berry
patent: 4385937 (1983-05-01), Ohmura
patent: 4418470 (1983-12-01), Naster et al.
patent: 4425700 (1984-01-01), Sasaki et al.
patent: 4463492 (1984-08-01), Maeguchi
patent: 4509990 (1985-04-01), Nasudev
patent: 4523963 (1985-06-01), Ohta et al.
patent: 4588447 (1986-05-01), Golecki
patent: 4607176 (1986-08-01), Burrows et al.
patent: 4615762 (1986-10-01), Gastrzebski et al.
patent: 4617066 (1986-10-01), Vasudeu
patent: 4659392 (1987-04-01), Vasudev
patent: 4766482 (1988-08-01), Smeltzer et al.
patent: 4775641 (1988-10-01), Duffy et al.
patent: 4843448 (1989-06-01), Garcia et al.
patent: 5029171 (1991-06-01), Reedy et al.
patent: 5300443 (1994-04-01), Shimagukuio et al.
Golecki et al., "Recrystallization of Silicon-on-Sapphire by on Ar Laser irradiation: Comparison between the solid and liquid-phase regimes"; Appl. Phys. Lett. 37(10), 1980, pp. 919-921.
Inoue et al., "Crystalline disorder reduction and defect-type change in Silicon-on-sapphire films by silicon implantation and subsequment thermal annealing"; Appl. Phys. Lett. 36(1), 1980, pp. 64-66.
Golecki et al., "Improvement of Crystalline quality of epitaxial Silicon on-Sapphire by ion-implantation and furnace regrowth"; Solid State Electronics, vol. 23, 1980, pp. 803-806.
Adele E. Schmitz et al., "A Deep-Submicrometer Microwave/Digital CMDS/SOS Technology", IEEE Electron Device Letters, vol. 12, No. 1, pp. 16-17, Jan. 1991.
Linnros et al. "Ion-beam induced epitaxial regrowth of amorphous layers in silicon on sapphire", Physical Review B, vol. 30, No. 7, 1984, pp. 3629-3638.
Lau et al. "Improvement of crystalline quality of epitaxial Si layers by ion implantation techniques"; Appl. Phys. Lett. 34(1), 1979, pp. 76-78.
P. H. Woerlee, et al.; "Half Micron CMOS on Ultra-Thin Silicon on Insulator", Technical Digest on the International Electron Devices Meeting 1989, Washington, D.C., pp. 821-824, Dec. 3-6, 1989.
Nobuo Sasaki et al., "A CMOS/SOS Synchronous Static RAM Fabricated with an Advanced SOS Technology; Japanese Journal of Applied Physics, Supplement" 18-1, vol. 18, pp. 57-62, 1979.
P. R. de la Houssaye, et al., "Fabrication of n-channel metal-oxide-semiconductor field-effect transitors with 0.2 .mu.m gate lengths in 500 .ANG. thin film silicon on sapphire", Jour. of Vacuum Science and Technology: Part B, vol. 10, No. 6, pp. 2954-2957, Nov./Dec. 1992.
Tsu-Jae King et al., "A Low-Temperature (<55.degree. C.) Silicon-Gemanium MOS Thin-Film Transistor Technology for Large-Area Electronics, Technical Digest of the International Electron Devices Meeting 1991", Washington, D.C., pp. 567-570, Dec. 8-11, 1991.
R. E. Reedy et al., "Characterization of Defect Reduction and Aluminum Rodistribution in Silicon Implanted SOS Films", Journal of Crystal Growth, vol. 58, No. 1, pp. 53-60, Jun. 1982.
R. F. Reedy et al., "Suppressing Al Out diffusion in Implantation Amorphized and Recrystallized Silicon on Sapphire Films", Applied Physics Letters, vol. 42, No. 8, pp. 707-709, Apr. 1983.
G. A. Garcia et al., "High-Quality CMOS on Thin (100 nm) Silicon on Sapphire", IEEE Electron Device Letters, vol. 9, No. 1, pp. 32-34, Jan. 1988.

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