High-frequency wide band amplifier having reduced impedance

Details High-frequency wide band amplifier having reduced impedance High-frequency wide band amplifier having reduced impedance

1993-10-08

1994-10-18

Mullins, James B.

Amplifiers

With semiconductor amplifying device

Including distributed parameter-type coupling

330302, 330273, 330296, H03F 360

Patent

active

053572130

ABSTRACT:
A high-frequency wideband power amplifier, of the type comprising an amplifier stage with at least two transistors mounted as a differential stage, coupled at input and at output to a matching circuit further comprises, in order to convey each bias voltage to the amplifier stage, at least one high-frequency transmission line section with a length close to a quarter of the wavelength of the carrier of the signal to be amplified, the impedance of which, brought in parallel on each transistor, is negligible with respect to the high frequencies and the series impedance of which is negligible in the baseband of the signal to be amplified; the line sections conveying the bias voltages to the input of each transistor are identical to one another in length and in impedance, and the same is the case for the line sections conveying the bias voltages to the output of each transistor.

REFERENCES:
patent: 3869678 (1975-03-01), Mahoney
patent: 4682119 (1987-07-01), Michel
patent: 4916410 (1990-04-01), Littlefield
patent: 5270814 (1993-12-01), Michel
Nachrichten Elektronik vol. 32, No. 2 Feb. 1978, Heidelberg pp. 48-50.
Patent Abstract of Japan, vol. 13, No. 450 (E-830), Oct. 11, 1989, JP-A-11 74 106, Jul. 10, 1989.
Symposium Record Broadcast Sessions Report No.: NC09101, Jan. 16, 1991, pp. 823-852, M. J. Koppen, "High Power Solid State Amplifiers for TV Band IV.V Transmitters Using BLV62 Transistor".

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