High frequency wafer probe apparatus and method

Details High frequency wafer probe apparatus and method High frequency wafer probe apparatus and method

1994-06-27

1996-01-23

Wieder, Kenneth A.

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

324762, 439578, G01R 3100

Patent

active

054867703

ABSTRACT:
An apparatus for probing high frequency electronic devices in wafer form includes a high frequency wafer probe (16, 56) having a conductor (36, 61), a dielectric layer (37, 71, 72), a grounding layer (38, 81, 82, 91), a signal probe needle (39,86), and a pair of ground needles (43, 72, 76) coupled to a substrate (11, 51). A plurality of high frequency wafer probes (16, 56) can be coupled to the substrate (11, 51) to probe high density high frequency electronic devices and to probe high frequency electronic devices having varying bonding pad layouts. The high frequency wafer probe (16, 56) is less sensitive to varying bonding pad height. The apparatus is suitable for probing high frequency electronic devices in a wafer manufacturing environment.

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