High-frequency traveling wave field-effect transistor

Details High-frequency traveling wave field-effect transistor High-frequency traveling wave field-effect transistor

1994-07-15

1997-05-06

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257280, 257282, 257256, H01L 2980

Patent

active

056273894

ABSTRACT:
A method of improving the performance of a traveling wave field-effect transistor operated at frequencies in the microwave range or above the microwave range comprising the steps of forming a depletion region beneath a gate electrode wherein, in a plane transverse to the direction of signal propagation, a depletion region edge has a first end portion located between the gate electrode and a drain electrode and a second end portion located between the gate electrode and a source electrode; and separating the depletion region edge from the drain electrode. Further improvements in the operation of the TWFET include adjusting the first end portion of the depletion region edge to be closer to the gate electrode relative to the distance between the second end portion of the depletion region edge and the gate electrode, controlling an effective conductivity of a semiconductor of the traveling-wave field effect transistor, and setting the length of the gate electrode at substantially 1.0 micron.

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