Amplifiers – With semiconductor amplifying device – Including plural amplifier channels
Patent
1990-10-18
1992-11-10
Gensler, Paul
Amplifiers
With semiconductor amplifying device
Including plural amplifier channels
333127, 333128, H03F 368, H01P 512
Patent
active
051627566
ABSTRACT:
A high frequency transmission line circuit including a plurality of units each constituting two transmission lines connected in common through one end of each, the other ends being independent, one end of a latter stage of units being connected to the other ends of a former stage so as to form a tournament configuration, the length of the transmission lines being made less than .lambda./4 (.lambda. being one wavelength of a frequency of a high frequency signal), and the charecteristic impedances of the transmission lines in units at an end side of the tournament are set larger than the charecteristic impedances of the transmission lines in the units at the peak side of the tournament such that each two parallely arranged adjoining units at the end side of the tournament configuration are joined, at their commonly connected ends, to the adjoining unit at the peak side thereof, so as to reduce the total length of the device.
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J. A. Benjamin, Use Hybrid Junctions for more VHF Power, Aug. 1, 1968, Electronic Design, vol. 16, No. 16, pp. 54-59, West Palm Beach, Florida.
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Y Taniguchi et al., A C-Band 25 Watt Linear Power FET, May 8-10, 1990, IEEE MTT-S International Microwave Symposium-Digest, vol. 111, pp. 981-984, New York, US.
Ha, Tri T., Solid-State Microwave Amplifier Design, Chapter 6, copyright 1981, pp. xiii-xiv, 248 and 253-267.
Takase Shintaro
Taniguchi Yasuichi
Fujitsu Limited
Gensler Paul
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