High-frequency transistor with low internal capacitance and low

Details High-frequency transistor with low internal capacitance and low High-frequency transistor with low internal capacitance and low

1988-12-19

1989-08-22

James, Andrew J.

357 59, H01L 2972

Patent

active

048600784

ABSTRACT:
A high-frequency transistor having a substrate of a first conductivity type, an epitaxial collector layer of the first conductivity type, a layer-shaped base region of the second opposite conductivity type, which is provided in the collector layer and is subdivided by a sunken oxide pattern into a number of base zones which are interconnected by conducting layers located on the oxide pattern, and at least one emitter zone of the first conductivity type in each base zone. According to the invention, the conducting layers consist of poly-crystalline silicon of which an edge is covered with a thin oxide layer which extends into the base zone and laterally bounds the emitter zones.

REFERENCES:
patent: 4338138 (1982-07-01), Cavaliere et al.
patent: 4368573 (1983-01-01), DeBrebisson et al.
Ning; T. H. et al., IBM Tech. Disc. Bull., vol. 22, No. 5, Oct. 1979, pp. 2123-2126.
Jambotkar, C. G., IBM Tech. Disc. Bull., vol. 19, No. 3, Aug. 1976, pp. 915-918.

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