High frequency transistor power amplifier

Details High frequency transistor power amplifier High frequency transistor power amplifier

1991-03-27

1992-06-09

Mottola, Steven

Amplifiers

With semiconductor amplifying device

Including plural amplifier channels

330286, H03F 368

Patent

active

051210835

ABSTRACT:
In a high frequency transistor power amplifier comprising a plurality of power transistors which are disposed in an annular arrangement, the input terminals of the transistors are connected to a common input through separate input matching circuits and a distributor circuit. The output terminals of the power transistors, on the other hand, are combined directly in a common output connection, without any intermediate matching circuits, this common output connection being connected to a single output matching circuit common to all the power transistors.

REFERENCES:
patent: 4234854 (1980-11-01), Schellenberg et al.
patent: 4371845 (1983-02-01), Pitzalis, Jr.
patent: 4812782 (1989-03-01), Ajioka
patent: 4956614 (1990-09-01), Baril
Patents Abstracts of Japan, E-727, Mar. 15, 1989, vol. 13, No. 109, "Integrated Amplifier Circuit", Kenkichi Hiraide.
Patents Abstracts of Japan, E-783, Jul. 7, 1989, vol. 13, No. 295, "High Frequency Power Amplifier", Hisafumi Okubo.
Motorola TMOS Power MOSFET Data, Chapter 6--"Paralleling Power MOSFETs", p. A-59.
Motorola Engineering Bulletin, Part 1, 1983, "Get 600 Watts RF from Four Power FETs", by Helge Granberg.
Discrete Semiconductors, Nov. 1957, "RF Power MOSFETs" Helge Granberg.
IEEE Journal of Solid-State Circuits, vol. SC-19, No. 4, Aug. 4, 1984, pp. 541-542.

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